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Impurities and Defects in Group IV Elements and III-V Compounds / Störstellen und Defekte in Elementen der IV. Gruppe und III-V-Verbindungen (Landolt-Börnstein: ... Technology - New Series / Condensed Matter)
Impurities and Defects in Group IV Elements and IIIV Compounds / Strstellen und Defekte in Elementen der IV Gruppe und IIIVVerbindungen - Landolt-Börnstein: ... Technology - New Series / Condensed Matter Author:C.A.J. Ammerlaan, W. Bergholz, B. Clerjaud, H. Ennen, H.G. Grimmeiss, B. Hamilton, U. Kaufmann, W.v. Münch, R. Murray, R.C. Newman, A.R. Peaker, G. Pensl, H.-J. Rath, R. Sauer, J. Schneider Subvolume III/22b of the Landolt-Börnstein New Series presents a comprehensive data compilation on defects and impurities in the elemental semiconductors and in the III-V compounds. Data on semiconductor defects were already included in the extended data collection on semiconductors in volumes III/17a...i. Research on semiconductor defects and i... more »mpurities, however, advanced so rapidly during recent years that a new subvolume on this important topic seemed desirable. The information given in subvolume III/22b ranges from trends on defect properties as predicted by theory and a survey of diagnostic techniques to extensive tables and graphical representations of defect properties. The editor and the authors have endeavoured to find a unified form and to critically select the important and reliable information from the wide range of published data. Discussions of ambiguous results or textbook style explanations are avoided.« less